Please use this identifier to cite or link to this item:
|Title:||Backside reflectance modulation of microscale metal interconnects|
|Citation:||Teo, J.K.J.,Chua, C.M.,Koh, L.S.,Phang, J.C.H. (2011). Backside reflectance modulation of microscale metal interconnects. IEEE International Reliability Physics Symposium Proceedings : FA.4.1-FA.4.6. ScholarBank@NUS Repository. https://doi.org/10.1109/IRPS.2011.5784577|
|Abstract:||The variation of backside reflectance modulation effects on metal line samples at different electrical bias and silicon backside thicknesses is investigated. Negative reflected intensity modulation is observed with temperature increase which is one to two orders of magnitude higher than published results. A backside reflectance model is developed to explain the experimental results. © 2011 IEEE.|
|Source Title:||IEEE International Reliability Physics Symposium Proceedings|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 19, 2019
checked on Jan 26, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.