Please use this identifier to cite or link to this item: https://doi.org/10.1109/IRPS.2011.5784577
Title: Backside reflectance modulation of microscale metal interconnects
Authors: Teo, J.K.J.
Chua, C.M.
Koh, L.S.
Phang, J.C.H. 
Keywords: laser reflectance
metal interconnect
substrate thickness
Issue Date: 2011
Source: Teo, J.K.J.,Chua, C.M.,Koh, L.S.,Phang, J.C.H. (2011). Backside reflectance modulation of microscale metal interconnects. IEEE International Reliability Physics Symposium Proceedings : FA.4.1-FA.4.6. ScholarBank@NUS Repository. https://doi.org/10.1109/IRPS.2011.5784577
Abstract: The variation of backside reflectance modulation effects on metal line samples at different electrical bias and silicon backside thicknesses is investigated. Negative reflected intensity modulation is observed with temperature increase which is one to two orders of magnitude higher than published results. A backside reflectance model is developed to explain the experimental results. © 2011 IEEE.
Source Title: IEEE International Reliability Physics Symposium Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/69489
ISBN: 9781424491117
ISSN: 15417026
DOI: 10.1109/IRPS.2011.5784577
Appears in Collections:Staff Publications

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