Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.3115534
Title: Arrayed Si/SiGe nanowire heterostructure formation via Au-catalyzed wet chemical etching method
Authors: Wang, X.
Pey, K.L.
Choi, W.K. 
Ho, C.K.F.
Fitzgerald, E.
Antoniadis, D.
Issue Date: 2009
Source: Wang, X.,Pey, K.L.,Choi, W.K.,Ho, C.K.F.,Fitzgerald, E.,Antoniadis, D. (2009). Arrayed Si/SiGe nanowire heterostructure formation via Au-catalyzed wet chemical etching method. ECS Transactions 16 (25) : 147-153. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3115534
Abstract: Aligned Si/SiGe nanowire heterostructures have been formed using Au-assisted top-down chemical etching method combined with nanosphere lithography. Since the nanowires are formed from the as-grown films, the heterostructures along the axial axis of the formed nanowires, i.e. axial heterostructures, are replica of the grown layered film structure. Thus SiGe nanowire heterostructures can be readily formed along the axis using an as-grown heterostructured film. By applying a nanosphere lithography technique, the space, diameter, and density of the nanowires can be controlled and readily formed at specifically defined area. Because of the flexibility and simplicity of this method, nanowires with embedded junctions of different doping characteristics and Si/Ge concentrations can be fabricated easily. Si and its Ge alloy nanowires and one dimensional heterostructures formed using this method may have great potential for vertical logic, photovoltaic and memory device applications. ©The Electrochemical Society.
Source Title: ECS Transactions
URI: http://scholarbank.nus.edu.sg/handle/10635/69448
ISBN: 9781615672998
ISSN: 19385862
DOI: 10.1149/1.3115534
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

31
checked on Feb 16, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.