Analysis of the drain thermal noise for deep submicron MOSFETs

Abstract

Seven models for the drain thermal noise of deep submicron MOSFETs are compared in this paper. The models have been applied to MOSFETs with channel lengths ranging from 65 nm to 250 nm operating in the linear and saturation regions. It is found that under the same drain voltage and gate voltage, the drain thermal noise increases as the channel length reduces. All models predict different values for the drain thermal noise, although the trends are the same. The impact of the channel length modulation (CLM) effect and the hot-carrier effect on the drain thermal noise are quantitatively studied. It is demonstrated that these effects increase the drain thermal noise in deep submicron MOSFETs and most significantly for shorter gate MOSFETs. ©2009 IEEE.