Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/69330
Title: An in-situ temperature measurement system for DUV lithography
Authors: Tan, W.W. 
Zhang, J.
Keywords: In-situ temperature measurement
Measurement accuracy
Out-of-contact fault
Post-exposure bake
Issue Date: 2002
Source: Tan, W.W.,Zhang, J. (2002). An in-situ temperature measurement system for DUV lithography. Conference Record - IEEE Instrumentation and Measurement Technology Conference 1 : 843-848. ScholarBank@NUS Repository.
Abstract: The absolute temperature, as well as the spatial uniformity, of points on a silicon wafer during the various deep ultra-violet lithographic steps has a direct impact on the critical dimension. As more stringent temperature specifications must be satisfied in order to produce smaller silicon features, there is a need to continuously monitor the substrate temperature. This paper describes an algorithm for post-processing the output of an in-situ temperature measurement unit in order to lower its effective response time. Experimental results are then presented to demonstrate that the desired measurement accuracy during the transient part of the post-exposure bake process can be achieved.
Source Title: Conference Record - IEEE Instrumentation and Measurement Technology Conference
URI: http://scholarbank.nus.edu.sg/handle/10635/69330
Appears in Collections:Staff Publications

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