Advanced Ni-based FUlly SIlicidation (FUSI) technology for sub-45nm CMOS devices

Please use this identifier to cite or link to this item: https://doi.org/10.1109/ICSICT.2006.306263

Title:	Advanced Ni-based FUlly SIlicidation (FUSI) technology for sub-45nm CMOS devices
Authors:	Yu, H.Y. Li, M.F. Lauwers, A. Kittl, J.A. Singanamalla, R. Veloso, A. Hoffmann, T. De Meyer, K. Jurczak, M. Absil, P. Biesemans, S.
Issue Date:	2007
Citation:	Yu, H.Y.,Li, M.F.,Lauwers, A.,Kittl, J.A.,Singanamalla, R.,Veloso, A.,Hoffmann, T.,De Meyer, K.,Jurczak, M.,Absil, P.,Biesemans, S. (2007). Advanced Ni-based FUlly SIlicidation (FUSI) technology for sub-45nm CMOS devices. ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings : 404-407. ScholarBank@NUS Repository. https://doi.org/10.1109/ICSICT.2006.306263
Abstract:	In this paper, we present a study on the advanced Ni-based FUlIy SIlicidation (FUSI) technology, which could satisfy various technology requirements of sub-45nm CMOS node, from the device Vt point of view. For n-FETs, adding Yb to Ni FUSI allows for tuning the work function (WF) from midgap (NiSi ∼4.72eV) to near n-type band-edge (∼4.22eV) on thin SiON. On the pFET, we study the effect of Al and Pt on Ni-rich FUSI and integrate it with a SiGe-channel. We also report on the use of a Ni FUlIy GErmano-SIlicide (FUGESI) as a metal gate in pFETs. © 2006 IEEE.
Source Title:	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
URI:	http://scholarbank.nus.edu.sg/handle/10635/69242
ISBN:	1424401615
DOI:	10.1109/ICSICT.2006.306263
Appears in Collections:	Staff Publications

There are no files associated with this item.

Check