Please use this identifier to cite or link to this item: https://doi.org/10.1109/ICSICT.2006.306263
Title: Advanced Ni-based FUlly SIlicidation (FUSI) technology for sub-45nm CMOS devices
Authors: Yu, H.Y.
Li, M.F. 
Lauwers, A.
Kittl, J.A.
Singanamalla, R.
Veloso, A.
Hoffmann, T.
De Meyer, K.
Jurczak, M.
Absil, P.
Biesemans, S.
Issue Date: 2007
Source: Yu, H.Y.,Li, M.F.,Lauwers, A.,Kittl, J.A.,Singanamalla, R.,Veloso, A.,Hoffmann, T.,De Meyer, K.,Jurczak, M.,Absil, P.,Biesemans, S. (2007). Advanced Ni-based FUlly SIlicidation (FUSI) technology for sub-45nm CMOS devices. ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings : 404-407. ScholarBank@NUS Repository. https://doi.org/10.1109/ICSICT.2006.306263
Abstract: In this paper, we present a study on the advanced Ni-based FUlIy SIlicidation (FUSI) technology, which could satisfy various technology requirements of sub-45nm CMOS node, from the device Vt point of view. For n-FETs, adding Yb to Ni FUSI allows for tuning the work function (WF) from midgap (NiSi ∼4.72eV) to near n-type band-edge (∼4.22eV) on thin SiON. On the pFET, we study the effect of Al and Pt on Ni-rich FUSI and integrate it with a SiGe-channel. We also report on the use of a Ni FUlIy GErmano-SIlicide (FUGESI) as a metal gate in pFETs. © 2006 IEEE.
Source Title: ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/69242
ISBN: 1424401615
DOI: 10.1109/ICSICT.2006.306263
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