Please use this identifier to cite or link to this item:
|Title:||Theory of surface photovoltage in a semiconductor with a Schottky contact|
|Citation:||Choo, S.C. (1995). Theory of surface photovoltage in a semiconductor with a Schottky contact. Solid-State Electronics 38 (12) : 2085-2093. ScholarBank@NUS Repository. https://doi.org/10.1016/0038-1101(95)00035-R|
|Abstract:||An analytical theory of surface photovoltage is developed for a semiconductor with a Schottky contact. The theory is able to predict, for light with small to large absorption coefficients, the photon flux required to yield a specified photovoltage, taking into account the three current components that describe the internal behaviour of the semiconductor, namely, the surface current, the space-charge recombination current and the bulk diffusion current. Detailed modelling of these current components is done with the help of exact numerical solutions of the drift-diffusion transport equations. The validity of the theory is confirmed by comparison with exact numerical solutions over a wide range of doping concentrations and minority-carrier lifetimes.|
|Source Title:||Solid-State Electronics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Nov 14, 2018
WEB OF SCIENCETM
checked on Nov 7, 2018
checked on Oct 27, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.