Please use this identifier to cite or link to this item: https://doi.org/10.1016/0038-1101(95)00035-R
Title: Theory of surface photovoltage in a semiconductor with a Schottky contact
Authors: Choo, S.C. 
Issue Date: 1995
Source: Choo, S.C. (1995). Theory of surface photovoltage in a semiconductor with a Schottky contact. Solid-State Electronics 38 (12) : 2085-2093. ScholarBank@NUS Repository. https://doi.org/10.1016/0038-1101(95)00035-R
Abstract: An analytical theory of surface photovoltage is developed for a semiconductor with a Schottky contact. The theory is able to predict, for light with small to large absorption coefficients, the photon flux required to yield a specified photovoltage, taking into account the three current components that describe the internal behaviour of the semiconductor, namely, the surface current, the space-charge recombination current and the bulk diffusion current. Detailed modelling of these current components is done with the help of exact numerical solutions of the drift-diffusion transport equations. The validity of the theory is confirmed by comparison with exact numerical solutions over a wide range of doping concentrations and minority-carrier lifetimes.
Source Title: Solid-State Electronics
URI: http://scholarbank.nus.edu.sg/handle/10635/68445
ISSN: 00381101
DOI: 10.1016/0038-1101(95)00035-R
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