Please use this identifier to cite or link to this item: https://doi.org/10.1021/jp808432f
Title: White light from an indium zinc oxide/porous silicon light-emitting diode
Authors: Hu, G. 
Li, S.Q. 
Gong, H. 
Zhao, Y.
Zhang, J. 
Wijesinghe, T.L.S.L. 
Blackwood, D.J. 
Issue Date: 15-Jan-2009
Source: Hu, G., Li, S.Q., Gong, H., Zhao, Y., Zhang, J., Wijesinghe, T.L.S.L., Blackwood, D.J. (2009-01-15). White light from an indium zinc oxide/porous silicon light-emitting diode. Journal of Physical Chemistry C 113 (2) : 751-754. ScholarBank@NUS Repository. https://doi.org/10.1021/jp808432f
Abstract: Stable white light electroluminescence from a light-emitting diode fabricated from porous silicon with a transparent indium zinc oxide (IZO) top contact layer is presented. High-resolution transmission electron microscopy shows that IZO deposition on porous silicon causes the formation of an amorphous interfacial layer, possibly the source of the additional blue light needed to convert the normally red/green electroluminescence to white. Although the exact cause of the blue emissions has not been identified, a number of possibilities are postulated. An alternative explanation based on junction breakdown is also discussed. © 2009 American Chemical Society.
Source Title: Journal of Physical Chemistry C
URI: http://scholarbank.nus.edu.sg/handle/10635/65060
ISSN: 19327447
DOI: 10.1021/jp808432f
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