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|Title:||Submicron three-dimensional trenched electrodes and capacitors for DRAMs and FRAMs: Fabrication and electrical testing|
|Source:||Miyake, M., Scott, J.F., Lou, X.J., Morrison, F.D., Nonaka, T., Motoyama, S., Tatsuta, T., Tsuji, O. (2008). Submicron three-dimensional trenched electrodes and capacitors for DRAMs and FRAMs: Fabrication and electrical testing. Journal of Applied Physics 104 (6) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2981197|
|Abstract:||We report conformal deposition of both RuO2 electrodes and PbZrx Ti1-x O3 (PZT) capacitors in submicron Si trenches through the same in situ liquid source mist processing. The step coverage for the RuO2 electrodes is 75% at 225°C. After electroding, we deposited Pb (Zr,Ti) O3 thin films and nanotubes using the same apparatus with remanent polarization of ∼15 μC/ cm2. The step coverage was 59% on the sidewall and 79% on the bottom wall. Electrical testing showed charge storage (capacitance/trench) was 13±2 pF, with a breakdown voltage of 11.3±0.2 V and dielectric constant ε=166±30. This shows that a single inexpensive processing can produce fully electroded dynamic random access memory trenched capacitors with high aspect ratios and commercial electrical performance. © 2008 American Institute of Physics.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
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