Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2981197
Title: Submicron three-dimensional trenched electrodes and capacitors for DRAMs and FRAMs: Fabrication and electrical testing
Authors: Miyake, M.
Scott, J.F.
Lou, X.J. 
Morrison, F.D.
Nonaka, T.
Motoyama, S.
Tatsuta, T.
Tsuji, O.
Issue Date: 2008
Source: Miyake, M., Scott, J.F., Lou, X.J., Morrison, F.D., Nonaka, T., Motoyama, S., Tatsuta, T., Tsuji, O. (2008). Submicron three-dimensional trenched electrodes and capacitors for DRAMs and FRAMs: Fabrication and electrical testing. Journal of Applied Physics 104 (6) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2981197
Abstract: We report conformal deposition of both RuO2 electrodes and PbZrx Ti1-x O3 (PZT) capacitors in submicron Si trenches through the same in situ liquid source mist processing. The step coverage for the RuO2 electrodes is 75% at 225°C. After electroding, we deposited Pb (Zr,Ti) O3 thin films and nanotubes using the same apparatus with remanent polarization of ∼15 μC/ cm2. The step coverage was 59% on the sidewall and 79% on the bottom wall. Electrical testing showed charge storage (capacitance/trench) was 13±2 pF, with a breakdown voltage of 11.3±0.2 V and dielectric constant ε=166±30. This shows that a single inexpensive processing can produce fully electroded dynamic random access memory trenched capacitors with high aspect ratios and commercial electrical performance. © 2008 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/65015
ISSN: 00218979
DOI: 10.1063/1.2981197
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