Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3271354
Title: Properties of ZnO influenced by P concentration
Authors: Hu, G. 
Gong, H. 
Wang, Y.
Liu, H.F.
Issue Date: 2009
Citation: Hu, G., Gong, H., Wang, Y., Liu, H.F. (2009). Properties of ZnO influenced by P concentration. Journal of Applied Physics 106 (12) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3271354
Abstract: The properties of ZnO were found to be influenced by P concentration. Upon increasing P concentration in ZnO, up to small values of less than 0.1 at. %, the as-deposited ZnO is found to undergo a change from n-type to p-type character. The change is accompanied by a redshift of the optical band gap energy and an increase in the lattice constants of ZnO, which can be attributed to substitution of O by P. A further increase in P concentration, up to 0.4 at. %, leads to a decrease in both lattice constants and energy band gaps of the samples, compared to those of undoped ZnO. Additionally, the electrical conductivity of samples stopped increasing for high P concentrations and became an insulator at P=0.4 at. %. Possible mechanisms for these effects were investigated and discussed. © 2009 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/64984
ISSN: 00218979
DOI: 10.1063/1.3271354
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