Photoluminescence characteristics of ZnCdO/ZnO single quantum well grown by pulsed laser deposition

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3567549

Title:	Photoluminescence characteristics of ZnCdO/ZnO single quantum well grown by pulsed laser deposition
Authors:	Yang, W.F. Wong, L.M. Wang, S.J. Sun, H.D. Ge, C.H. Lee, A.Y.S. Gong, H.
Issue Date:	21-Mar-2011
Citation:	Yang, W.F., Wong, L.M., Wang, S.J., Sun, H.D., Ge, C.H., Lee, A.Y.S., Gong, H. (2011-03-21). Photoluminescence characteristics of ZnCdO/ZnO single quantum well grown by pulsed laser deposition. Applied Physics Letters 98 (12) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3567549
Abstract:	Optical properties of ZnCdO/ZnO single quantum well (SQW) grown on c-sapphire substrate by pulsed laser deposition were investigated. Temperature dependent photoluminescence (PL) measurement was performed from 10 to 300 K to study the carrier localization effect and peak evolution. The LO-phonon replicas up to third order with Huang-Rhys factor of 0.17 were observed. The SQW exhibited very strong PL from the well layer and extremely weak emission from the ZnO barriers, indicating high quality interfaces and highly efficient relaxation. © 2011 American Institute of Physics.
Source Title:	Applied Physics Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/64974
ISSN:	00036951
DOI:	10.1063/1.3567549
Appears in Collections:	Staff Publications

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