Please use this identifier to cite or link to this item:
|Title:||Photoluminescence characteristics of ZnCdO/ZnO single quantum well grown by pulsed laser deposition|
|Authors:||Yang, W.F. |
|Citation:||Yang, W.F., Wong, L.M., Wang, S.J., Sun, H.D., Ge, C.H., Lee, A.Y.S., Gong, H. (2011-03-21). Photoluminescence characteristics of ZnCdO/ZnO single quantum well grown by pulsed laser deposition. Applied Physics Letters 98 (12) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3567549|
|Abstract:||Optical properties of ZnCdO/ZnO single quantum well (SQW) grown on c-sapphire substrate by pulsed laser deposition were investigated. Temperature dependent photoluminescence (PL) measurement was performed from 10 to 300 K to study the carrier localization effect and peak evolution. The LO-phonon replicas up to third order with Huang-Rhys factor of 0.17 were observed. The SQW exhibited very strong PL from the well layer and extremely weak emission from the ZnO barriers, indicating high quality interfaces and highly efficient relaxation. © 2011 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 20, 2018
WEB OF SCIENCETM
checked on Jun 5, 2018
checked on Jul 6, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.