Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3619815
Title: Highly reproducible memory effect of organic multilevel resistive-switch device utilizing graphene oxide sheets/polyimide hybrid nanocomposite
Authors: Wu, C.
Li, F.
Zhang, Y.
Guo, T.
Chen, T. 
Issue Date: 25-Jul-2011
Source: Wu, C., Li, F., Zhang, Y., Guo, T., Chen, T. (2011-07-25). Highly reproducible memory effect of organic multilevel resistive-switch device utilizing graphene oxide sheets/polyimide hybrid nanocomposite. Applied Physics Letters 99 (4) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3619815
Abstract: The functionalization of graphene oxide (GO) sheets with polyimide (PI) enables the layer-by-layer fabrication of a GO-PI hybrid resistive-switch device and leads to high reproducibility of the memory effect. The current-voltage curves for the as-fabricated device exhibit multilevel resistive-switch properties under various reset voltages. The capacitance-voltage characteristics for a capacitor based on GO-PI nanocomposite indicate that the electrical switching may originate from the charge trapping in GO sheets. The high device-to-device uniformity and unique memory properties of the device make it an attractive candidate for applications in next-generation high-density nonvolatile flash memories. © 2011 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/64903
ISSN: 00036951
DOI: 10.1063/1.3619815
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