Please use this identifier to cite or link to this item:
|Title:||Highly reproducible memory effect of organic multilevel resistive-switch device utilizing graphene oxide sheets/polyimide hybrid nanocomposite|
|Source:||Wu, C., Li, F., Zhang, Y., Guo, T., Chen, T. (2011-07-25). Highly reproducible memory effect of organic multilevel resistive-switch device utilizing graphene oxide sheets/polyimide hybrid nanocomposite. Applied Physics Letters 99 (4) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3619815|
|Abstract:||The functionalization of graphene oxide (GO) sheets with polyimide (PI) enables the layer-by-layer fabrication of a GO-PI hybrid resistive-switch device and leads to high reproducibility of the memory effect. The current-voltage curves for the as-fabricated device exhibit multilevel resistive-switch properties under various reset voltages. The capacitance-voltage characteristics for a capacitor based on GO-PI nanocomposite indicate that the electrical switching may originate from the charge trapping in GO sheets. The high device-to-device uniformity and unique memory properties of the device make it an attractive candidate for applications in next-generation high-density nonvolatile flash memories. © 2011 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Mar 7, 2018
WEB OF SCIENCETM
checked on Jan 29, 2018
checked on Mar 11, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.