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|Title:||Ferroelastic domain wall dynamics in ferroelectric bilayers|
|Keywords:||Band excitation piezoforce spectroscopy|
Switching spectroscopy PFM
|Source:||Anbusathaiah, V., Jesse, S., Arredondo, M.A., Kartawidjaja, F.C., Ovchinnikov, O.S., Wang, J., Kalinin, S.V., Nagarajan, V. (2010-09). Ferroelastic domain wall dynamics in ferroelectric bilayers. Acta Materialia 58 (16) : 5316-5325. ScholarBank@NUS Repository. https://doi.org/10.1016/j.actamat.2010.06.004|
|Abstract:||High-performance piezoelectric devices based on ferroelectric materials rely heavily on ferroelastic domain wall switching. Here we present visual evidence for the local mechanisms that underpin domain wall dynamics in ferroelastic nanodomains. State-of-the-art band excitation switching spectroscopy piezoforce microscopy (PFM) reveals distinct origins for the reversible and irreversible components of ferroelastic domain motion. Extrapolating the PFM images to case for uniform fields, we posit that, while reversible switching is essentially a linear motion of the ferroelastic domains, irreversible switching takes place via domain wall twists. Critically, real-time images of in situ domain dynamics under an external bias reveal that the reversible component leads to reduced coercive voltages. Finally, we show that junctions representing three-domain architecture represent facile interfaces for ferroelastic domain switching, and are likely responsible for irreversible processes in the uniform fields. The results presented here thus provide (hitherto missing) fundamental insight into the correlations between the physical mechanisms that govern ferroelastic domain behavior and the observed functional response in domain-engineered thin film ferroelectric devices. © 2010 Acta Materialia Inc. Published by Elsevier Ltd.|
|Source Title:||Acta Materialia|
|Appears in Collections:||Staff Publications|
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