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|Title:||Effect of ion bombardment on the synthesis of vertically aligned single-walled carbon nanotubes by plasma-enhanced chemical vapor deposition|
|Citation:||Luo, Z., Lim, S., You, Y., Miao, J., Gong, H., Zhang, J., Wang, S., Lin, J., Shen, Z. (2008-06-25). Effect of ion bombardment on the synthesis of vertically aligned single-walled carbon nanotubes by plasma-enhanced chemical vapor deposition. Nanotechnology 19 (25) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/0957-4484/19/25/255607|
|Abstract:||The synthesis of vertically aligned single-walled carbon nanotubes (VA-SWNTs) by plasma-enhanced chemical vapor deposition (PECVD) was achieved at 500-600°C, using ethylene as the carbon source and 1 nm Fe film as the catalyst. For growth of high-quality VA-SWNTs in a plasma sheath, it is crucial to alleviate the undesirable ion bombardment etching effects by the optimization of plasma input power and gas pressure. The resistibility of synthesized VA-SWNTs against ion bombardment etching was found to be closely related to the growth temperature. At relatively low temperature (500°C), the VA-SWNTs were very susceptible to ion bombardments, which could induce structural defects, and even resulted in a structural transition to few-walled nanotubes. For capacitively coupled radio frequency (rf) PECVD operating at moderate gas pressure (0.3-10 Torr), the ion bombardment etching effect is mainly dependent on the ion flux, which is related to the plasma input power and gas pressure. © IOP Publishing Ltd.|
|Appears in Collections:||Staff Publications|
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