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|Title:||Abrupt resistivity decrease and other unexpected phenomena in a doped amorphous ternary metal oxide|
|Source:||Sun, J., Gong, H. (2010-08-30). Abrupt resistivity decrease and other unexpected phenomena in a doped amorphous ternary metal oxide. Applied Physics Letters 97 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3485670|
|Abstract:||The phenomenon of insulator-metal transition introduced in amorphous binary gallium oxide as discussed by Nagarajan [Nature Mater. 7, 391 (2008)] is demonstrated to be also achievable in an amorphous ternary metal oxide system. The annealing method used in amorphous binary gallium oxide is not applicable to the ternary system. A different approach, aluminum incorporation in amorphous indium zinc oxide (IZO), is adopted in achieving insulator-metal transition or sharp resistance decrease in the amorphous ternary oxide. In addition to sharp resistance decrease, some other unexpected phenomena, such as different partial crystallization, are also reported. © 2010 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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