Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3485670
Title: Abrupt resistivity decrease and other unexpected phenomena in a doped amorphous ternary metal oxide
Authors: Sun, J.
Gong, H. 
Issue Date: 30-Aug-2010
Source: Sun, J., Gong, H. (2010-08-30). Abrupt resistivity decrease and other unexpected phenomena in a doped amorphous ternary metal oxide. Applied Physics Letters 97 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3485670
Abstract: The phenomenon of insulator-metal transition introduced in amorphous binary gallium oxide as discussed by Nagarajan [Nature Mater. 7, 391 (2008)] is demonstrated to be also achievable in an amorphous ternary metal oxide system. The annealing method used in amorphous binary gallium oxide is not applicable to the ternary system. A different approach, aluminum incorporation in amorphous indium zinc oxide (IZO), is adopted in achieving insulator-metal transition or sharp resistance decrease in the amorphous ternary oxide. In addition to sharp resistance decrease, some other unexpected phenomena, such as different partial crystallization, are also reported. © 2010 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/64806
ISSN: 00036951
DOI: 10.1063/1.3485670
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