Please use this identifier to cite or link to this item: https://doi.org/10.1088/0960-1317/23/3/035038
Title: A simple approach to sub-100 nm resist nanopatterns with a high aspect ratio
Authors: Zong, B.Y.
Ho, P.
Han, G.C.
Chow, G.M. 
Chen, J.S. 
Issue Date: Mar-2013
Citation: Zong, B.Y., Ho, P., Han, G.C., Chow, G.M., Chen, J.S. (2013-03). A simple approach to sub-100 nm resist nanopatterns with a high aspect ratio. Journal of Micromechanics and Microengineering 23 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/0960-1317/23/3/035038
Abstract: A simple methodology to prepare sub-100 nm resist nanopatterns with a high aspect ratio for the transfer of device nanofeatures is demonstrated. The novel method is based on a two- or multi-step developing process with the incorporation of an ∼4 nm thick metal film to protect the fine resist nanopatterns in the developer solution. Using this approach, sub-100 nm resist nanopatterns of different shapes were readily fabricated using the positive- and negative-tone electron-beam resists. Subsequently, fine device nanostructures could be readily converted from these fine resist nanopatterns with a high aspect ratio. © 2013 IOP Publishing Ltd.
Source Title: Journal of Micromechanics and Microengineering
URI: http://scholarbank.nus.edu.sg/handle/10635/64802
ISSN: 09601317
DOI: 10.1088/0960-1317/23/3/035038
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