Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2780080
Title: Defect engineering by surface chemical state in boron-doped preamorphized silicon
Authors: Yeong, S.H.
Srinivasan, M.P. 
Colombeau, B.
Chan, L.
Akkipeddi, R.
Kwok, C.T.M.
Vaidyanathan, R.
Seebauer, E.G.
Issue Date: 2007
Source: Yeong, S.H., Srinivasan, M.P., Colombeau, B., Chan, L., Akkipeddi, R., Kwok, C.T.M., Vaidyanathan, R., Seebauer, E.G. (2007). Defect engineering by surface chemical state in boron-doped preamorphized silicon. Applied Physics Letters 91 (10) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2780080
Abstract: The continual downscaling of silicon devices for integrated circuits requires the formation of pn junctions that are progressively shallower, incorporate increasing levels of electrically active dopant, and sustain minimal implantation damage. In the case of boron implanted into preamorphized Si, the authors show that all these goals can be accomplished simultaneously through the use of an atomically clean surface, which during annealing acts as a large sink that removes Si interstitials selectively over dopant interstitials. © 2007 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/63693
ISSN: 00036951
DOI: 10.1063/1.2780080
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

9
checked on Dec 6, 2017

WEB OF SCIENCETM
Citations

9
checked on Nov 17, 2017

Page view(s)

38
checked on Dec 10, 2017

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.