Please use this identifier to cite or link to this item:
|Title:||Defect engineering by surface chemical state in boron-doped preamorphized silicon|
|Source:||Yeong, S.H., Srinivasan, M.P., Colombeau, B., Chan, L., Akkipeddi, R., Kwok, C.T.M., Vaidyanathan, R., Seebauer, E.G. (2007). Defect engineering by surface chemical state in boron-doped preamorphized silicon. Applied Physics Letters 91 (10) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2780080|
|Abstract:||The continual downscaling of silicon devices for integrated circuits requires the formation of pn junctions that are progressively shallower, incorporate increasing levels of electrically active dopant, and sustain minimal implantation damage. In the case of boron implanted into preamorphized Si, the authors show that all these goals can be accomplished simultaneously through the use of an atomically clean surface, which during annealing acts as a large sink that removes Si interstitials selectively over dopant interstitials. © 2007 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 21, 2018
WEB OF SCIENCETM
checked on Jan 17, 2018
checked on Feb 19, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.