Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/62867
Title: The study of piezoelectric effect in wurtzite GaN/InGaN/AlGaN multilayer structures
Authors: Liu, W.
Teo, K.L. 
Li, M.F. 
Chua, S.J. 
Uchida, K.
Tokunaga, H.
Akutsu, N.
Matsumoto, K.
Keywords: Contactless electroreflectance
Franz-Keldysh oscillations
GaN
Photovoltaic spectroscopy
Piezoelectric effect
Residual strain
Issue Date: 15-Jun-1998
Source: Liu, W.,Teo, K.L.,Li, M.F.,Chua, S.J.,Uchida, K.,Tokunaga, H.,Akutsu, N.,Matsumoto, K. (1998-06-15). The study of piezoelectric effect in wurtzite GaN/InGaN/AlGaN multilayer structures. Journal of Crystal Growth 189-190 : 648-651. ScholarBank@NUS Repository.
Abstract: By using photovoltaic spectroscopy and contactless electroreflectance spectroscopy, large electric field was found to exist in wurztite GaN/InGaN/AlGaN multilayer structures. The electric field strengths in the GaN layer and the AlGaN layer were obtained from the analysis of the Franz-Keldysh oscillations in contactless electroreflectance spectra. These electric fields were attributed to be induced by the piezoelectric effect in wurztite nitride systems. © 1998 Elsevier Science B.V. All rights reserved.
Source Title: Journal of Crystal Growth
URI: http://scholarbank.nus.edu.sg/handle/10635/62867
ISSN: 00220248
Appears in Collections:Staff Publications

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