Please use this identifier to cite or link to this item:
|Title:||Study of electron traps in semi-insulating gallium-arsenide buffer layers for the suppression of backgating by the zero-bias thermally stimulated current technique|
|Authors:||Lau, W.S. |
|Source:||Lau, W.S., Chong, T.C., Tan, L.S., Goo, C.H., Goh, K.S., Lee, K.M. (1992). Study of electron traps in semi-insulating gallium-arsenide buffer layers for the suppression of backgating by the zero-bias thermally stimulated current technique. Applied Physics Letters 61 (1) : 49-51. ScholarBank@NUS Repository. https://doi.org/10.1063/1.107664|
|Abstract:||Electron traps in undoped-GaAs epitaxial layers grown at low temperatures (<300°C) by molecular beam epitaxy were studied by the zero-bias thermally stimulated current technique. Four traps T1-4 were detected in as-grown samples. It was also found that all the traps detected can be annealed out except the T1 trap. However, the buffer layer, with or without annealing, was found to be an effective remedy for backgating in high electron mobility transistors, indicating that the T1 trap may have a much more significant role than the three shallower traps in the suppression of backgating. The T1 trap is believed to be the EL3 electron trap which is related to oxygen contamination.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 28, 2018
WEB OF SCIENCETM
checked on Feb 19, 2018
checked on Mar 12, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.