Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/62817
Title: Stress-induced leakage current and lateral nonuniform charge generation in thermal oxides subjected to negative-gate-voltage impulse stressing
Authors: Lim, P.S.
Chim, W.K. 
Keywords: C-V measurement
Electrical annealing
Electrostatic discharge
Hole trap
Lateral nonuniform charge
MOS capacitor
Oxide reliability
Stress-induced leakage current
Transmission line pulsing
Issue Date: 1999
Source: Lim, P.S.,Chim, W.K. (1999). Stress-induced leakage current and lateral nonuniform charge generation in thermal oxides subjected to negative-gate-voltage impulse stressing. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 38 (4 B) : 2652-2655. ScholarBank@NUS Repository.
Abstract: High-field stressing of gate oxides can lead to an increase in the stress-induced leakage current (SILC), which could impose a potential scaling limitation for tunnel oxide applications in nonvolatile semiconductor memories. In this article, we report on positive lateral nonuniform (LNU) charge generation and hole trapping in silicon dioxide subjected to negative-gate-voltage, high-field impulse stressing, and the correlation of the LNU charge to the SILC. The LNU charge and SILC can be electrically annealed through repeated measurements of the gate current density vs gate voltage characteristics, or using either a constant voltage or constant current stress step. Electrical annealing studies show that the positive LNU charge is located close to the oxide-silicon interface and is distributed with a certain minimum energy level. A critical fluence or gate voltage has to be applied before significant LNU charge annealing is observed. © 1999 Publication Board, Japanese Journal of Applied Physics.
Source Title: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
URI: http://scholarbank.nus.edu.sg/handle/10635/62817
ISSN: 00214922
Appears in Collections:Staff Publications

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