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|Title:||RELATIVE HYDROGEN CONTENT IN PLASMA-ENHANCED CVD SILICON NITRIDE FILMS: SUBSTRATE TEMPERATURE DEPENDENCE AND EFFECT OF THERMAL ANNEALING.|
|Authors:||Ling, C.H. |
|Citation:||Ling, C.H.,Kwok, C.Y.,Prasad,K. (1985-05). RELATIVE HYDROGEN CONTENT IN PLASMA-ENHANCED CVD SILICON NITRIDE FILMS: SUBSTRATE TEMPERATURE DEPENDENCE AND EFFECT OF THERMAL ANNEALING.. Physica Status Solidi (A) Applied Research 89 (1) : k39-k43. ScholarBank@NUS Repository.|
|Abstract:||The authors report results on the effects of substrate temperature and thermal annealing on the hydrogen content of films prepared in the temperature range 50 to 300 degree C. Incorporated hydrogen effects the etch rate of plasma-enhanced CVD silicon nitride films. The etch rate anomaly observed previously can be explained in terms of the variation of H content over the range of deposition temperatures. 23 to 28% can be annealed out after a 21 h 400 degree C heat treatment.|
|Source Title:||Physica Status Solidi (A) Applied Research|
|Appears in Collections:||Staff Publications|
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