Please use this identifier to cite or link to this item: https://doi.org/7/018
Title: Phonon-assisted photoluminescence in wurtzite GaN epilayer
Authors: Liu, W.
Li, M.F. 
Xu, S.J.
Uchida, K.
Matsumoto, K.
Issue Date: Jul-1998
Source: Liu, W.,Li, M.F.,Xu, S.J.,Uchida, K.,Matsumoto, K. (1998-07). Phonon-assisted photoluminescence in wurtzite GaN epilayer. Semiconductor Science and Technology 13 (7) : 769-772. ScholarBank@NUS Repository. https://doi.org/7/018
Abstract: Temperature-dependent photoluminescence of a wurtzite GaN epilayer was measured in the range of 4 to 300 K. At low temperature, the neutral-donor bound exciton emission dominates the spectra, while with increasing temperature, free exciton emissions grow rapidly and finally become the dominant lines. The contribution of the exciton-phonon interaction to the exciton linewidth was studied. Beside the exciton emissions, LO-phonon-assisted photoluminescence associated with both the bound exciton and the free exciton was observed. The temperature dependence of LO-phonon-assisted emissions can be well explained by the phonon-assisted free exciton emission theory established for II-VI compound semiconductors by Permogorov. In particular, the study of the 2LO phonon replica can provide information on the temperature dependence of the concentration and recombination lifetime of free excitons in GaN.
Source Title: Semiconductor Science and Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/62614
ISSN: 02681242
DOI: 7/018
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