Please use this identifier to cite or link to this item: https://doi.org/10.1088/0268-1242/13/5/003
Title: Modelling the degradation in the subthreshold characteristics of submicrometre LDD PMOSFETs under hot-carrier stressing
Authors: Qin, W.H.
Chim, W.K. 
Chan, D.S.H. 
Lou, C.L.
Issue Date: May-1998
Citation: Qin, W.H., Chim, W.K., Chan, D.S.H., Lou, C.L. (1998-05). Modelling the degradation in the subthreshold characteristics of submicrometre LDD PMOSFETs under hot-carrier stressing. Semiconductor Science and Technology 13 (5) : 453-459. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/13/5/003
Abstract: Hot-carrier injection is observed increasingly to degrade the subthreshold characteristics with the scaling of LDD PMOSFETs. A physical subthreshold current model is applied to the fresh and hot-carrier-stressed submicrometre channel length devices. The channel length reduction is subsequently extracted. An empirical relationship is developed to characterize the degradation parameters as a function of stress time and channel length. With the use of this relationship, we can determine the device lifetime or predict the minimum allowable channel length (for a certain percentage of degradation and lifetime) that is applicable for a specific technology. The degradation of the PMOSFET subthreshold current, which imposes a major limit on device reliability for deep-submicron technology and low-power applications, is fully described by a physical analytical model.
Source Title: Semiconductor Science and Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/62433
ISSN: 02681242
DOI: 10.1088/0268-1242/13/5/003
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