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|Title:||Logarithmic time dependence of pMOSFET degradation observed from gate capacitance|
|Authors:||Ling, C.H. |
|Source:||Ling, C.H.,Yeow, Y.T.,Ah, L.K.,Yung, W.H.,Choi, W.K. (1993-01-01). Logarithmic time dependence of pMOSFET degradation observed from gate capacitance. Electronics Letters 29 (4) : 418-420. ScholarBank@NUS Repository.|
|Abstract:||Hot-carrier degradation in pMOSFETs is observed from an increase in gate overlap capacitance, due to trapped electrons in the gate oxide inverting a portion of the channel near the stressed junction. Logarithmic time growth of the overlap capacitance, and hence of the trapped charge, is reported.|
|Source Title:||Electronics Letters|
|Appears in Collections:||Staff Publications|
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