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https://scholarbank.nus.edu.sg/handle/10635/62388
| Title: | Logarithmic time dependence of pMOSFET degradation observed from gate capacitance | Authors: | Ling, C.H. Yeow, Y.T. Ah, L.K. Yung, W.H. Choi, W.K. |
Issue Date: | 1-Jan-1993 | Citation: | Ling, C.H.,Yeow, Y.T.,Ah, L.K.,Yung, W.H.,Choi, W.K. (1993-01-01). Logarithmic time dependence of pMOSFET degradation observed from gate capacitance. Electronics Letters 29 (4) : 418-420. ScholarBank@NUS Repository. | Abstract: | Hot-carrier degradation in pMOSFETs is observed from an increase in gate overlap capacitance, due to trapped electrons in the gate oxide inverting a portion of the channel near the stressed junction. Logarithmic time growth of the overlap capacitance, and hence of the trapped charge, is reported. | Source Title: | Electronics Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/62388 | ISSN: | 00135194 |
| Appears in Collections: | Staff Publications |
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