Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/62240
Title: GaAs FET large-signal model for high power amplifier
Authors: Ma, J.
Xiao, Q.
Ooi, B.L. 
Zhou, X.D. 
Chew, S.T. 
Issue Date: 1999
Source: Ma, J.,Xiao, Q.,Ooi, B.L.,Zhou, X.D.,Chew, S.T. (1999). GaAs FET large-signal model for high power amplifier. Asia-Pacific Microwave Conference Proceedings, APMC 3 : 642-645. ScholarBank@NUS Repository.
Abstract: A new large signal model of GaAs MESFET transistor is proposed. A commercial packaged high power MESFET transistor (Fujitsu FLC103WG) is adopted for the extraction. Both the hot and cold condition measurements and the pulsed 1/V measurement are performed to derive the model. A simple single-stage class-AB amplifier is subsequently built so as to verify the derived model. The simulation and measurement results of the intermodulation distortion of this amplifier are compared.
Source Title: Asia-Pacific Microwave Conference Proceedings, APMC
URI: http://scholarbank.nus.edu.sg/handle/10635/62240
Appears in Collections:Staff Publications

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