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https://scholarbank.nus.edu.sg/handle/10635/62240
| Title: | GaAs FET large-signal model for high power amplifier | Authors: | Ma, J. Xiao, Q. Ooi, B.L. Zhou, X.D. Chew, S.T. |
Issue Date: | 1999 | Citation: | Ma, J.,Xiao, Q.,Ooi, B.L.,Zhou, X.D.,Chew, S.T. (1999). GaAs FET large-signal model for high power amplifier. Asia-Pacific Microwave Conference Proceedings, APMC 3 : 642-645. ScholarBank@NUS Repository. | Abstract: | A new large signal model of GaAs MESFET transistor is proposed. A commercial packaged high power MESFET transistor (Fujitsu FLC103WG) is adopted for the extraction. Both the hot and cold condition measurements and the pulsed 1/V measurement are performed to derive the model. A simple single-stage class-AB amplifier is subsequently built so as to verify the derived model. The simulation and measurement results of the intermodulation distortion of this amplifier are compared. | Source Title: | Asia-Pacific Microwave Conference Proceedings, APMC | URI: | http://scholarbank.nus.edu.sg/handle/10635/62240 |
| Appears in Collections: | Staff Publications |
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