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|Title:||Experimental study of the Fowler-Nordheim tunneling induced degradation of LDD PMOSFET's|
|Citation:||Pan, Y. (1994-02). Experimental study of the Fowler-Nordheim tunneling induced degradation of LDD PMOSFET's. IEEE Transactions on Electron Devices 41 (2) : 268-271. ScholarBank@NUS Repository. https://doi.org/10.1109/16.277367|
|Abstract:||We present experimental work on the Fowler-Nordheim tunneling induced degradation of the submicron LDD PMOSFET's. Effects of polysilicon gate oxidation conditions and the stress polarity are investigated. PMOSFET's degrade excessively under the negative gate-to-drain bias stress. The devices with the graded-gate-oxide structures are more resistant to the Fowler-Nordheim tunneling stress, which is consistent with the hot carrier induced degradation of the LDD PMOSFET's.|
|Source Title:||IEEE Transactions on Electron Devices|
|Appears in Collections:||Staff Publications|
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