Please use this identifier to cite or link to this item:
|Title:||Experimental study of the Fowler-Nordheim tunneling induced degradation of LDD PMOSFET's|
|Source:||Pan, Y. (1994-02). Experimental study of the Fowler-Nordheim tunneling induced degradation of LDD PMOSFET's. IEEE Transactions on Electron Devices 41 (2) : 268-271. ScholarBank@NUS Repository. https://doi.org/10.1109/16.277367|
|Abstract:||We present experimental work on the Fowler-Nordheim tunneling induced degradation of the submicron LDD PMOSFET's. Effects of polysilicon gate oxidation conditions and the stress polarity are investigated. PMOSFET's degrade excessively under the negative gate-to-drain bias stress. The devices with the graded-gate-oxide structures are more resistant to the Fowler-Nordheim tunneling stress, which is consistent with the hot carrier induced degradation of the LDD PMOSFET's.|
|Source Title:||IEEE Transactions on Electron Devices|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 14, 2017
WEB OF SCIENCETM
checked on Nov 16, 2017
checked on Dec 17, 2017
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.