Please use this identifier to cite or link to this item: https://doi.org/10.1109/16.277367
Title: Experimental study of the Fowler-Nordheim tunneling induced degradation of LDD PMOSFET's
Authors: Pan, Y. 
Issue Date: Feb-1994
Source: Pan, Y. (1994-02). Experimental study of the Fowler-Nordheim tunneling induced degradation of LDD PMOSFET's. IEEE Transactions on Electron Devices 41 (2) : 268-271. ScholarBank@NUS Repository. https://doi.org/10.1109/16.277367
Abstract: We present experimental work on the Fowler-Nordheim tunneling induced degradation of the submicron LDD PMOSFET's. Effects of polysilicon gate oxidation conditions and the stress polarity are investigated. PMOSFET's degrade excessively under the negative gate-to-drain bias stress. The devices with the graded-gate-oxide structures are more resistant to the Fowler-Nordheim tunneling stress, which is consistent with the hot carrier induced degradation of the LDD PMOSFET's.
Source Title: IEEE Transactions on Electron Devices
URI: http://scholarbank.nus.edu.sg/handle/10635/62169
ISSN: 00189383
DOI: 10.1109/16.277367
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