Please use this identifier to cite or link to this item:
|Title:||Enhancement of electroluminescence properties in delta-doped quantum well of bipolar resonant tunneling diode|
|Authors:||Sheng, Hanyu |
|Source:||Sheng, Hanyu,Chua, Soo-Jin (1994). Enhancement of electroluminescence properties in delta-doped quantum well of bipolar resonant tunneling diode. Proceedings of SPIE - The International Society for Optical Engineering 2321 : 104-106. ScholarBank@NUS Repository.|
|Abstract:||An analytical model of δ-doped quantum well is developed. The results show that by using δ-doped quantum well structure, the area densities of the electrons and holes in the conduction and valence bands respectively can be increased by 4 orders of magnitudes compared with the n-i-p structure. Therefore the electroluminescence enhancement can be expected for the bipolar resonant tunneling diode of δ-doped quantum well.|
|Source Title:||Proceedings of SPIE - The International Society for Optical Engineering|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 8, 2017
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.