Enhancement of electroluminescence properties in delta-doped quantum well of bipolar resonant tunneling diode

Abstract

An analytical model of δ-doped quantum well is developed. The results show that by using δ-doped quantum well structure, the area densities of the electrons and holes in the conduction and valence bands respectively can be increased by 4 orders of magnitudes compared with the n-i-p structure. Therefore the electroluminescence enhancement can be expected for the bipolar resonant tunneling diode of δ-doped quantum well.