Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/62139
Title: Enhancement of electroluminescence properties in delta-doped quantum well of bipolar resonant tunneling diode
Authors: Sheng, Hanyu 
Chua, Soo-Jin 
Issue Date: 1994
Source: Sheng, Hanyu,Chua, Soo-Jin (1994). Enhancement of electroluminescence properties in delta-doped quantum well of bipolar resonant tunneling diode. Proceedings of SPIE - The International Society for Optical Engineering 2321 : 104-106. ScholarBank@NUS Repository.
Abstract: An analytical model of δ-doped quantum well is developed. The results show that by using δ-doped quantum well structure, the area densities of the electrons and holes in the conduction and valence bands respectively can be increased by 4 orders of magnitudes compared with the n-i-p structure. Therefore the electroluminescence enhancement can be expected for the bipolar resonant tunneling diode of δ-doped quantum well.
Source Title: Proceedings of SPIE - The International Society for Optical Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/62139
ISBN: 0819416525
ISSN: 0277786X
Appears in Collections:Staff Publications

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