Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/62130
Title: Electron-beam irradiation-induced gate oxide degradation
Authors: Cho, B.J. 
Chong, P.F.
Chor, E.F. 
Joo, M.S.
Yeo, I.S.
Issue Date: Dec-2000
Source: Cho, B.J.,Chong, P.F.,Chor, E.F.,Joo, M.S.,Yeo, I.S. (2000-12). Electron-beam irradiation-induced gate oxide degradation. Journal of Applied Physics 88 (11) : 6731-6735. ScholarBank@NUS Repository.
Abstract: Gate oxide degradation induced by electron-beam irradiation has been studied. A large increase in the low-field excess leakage current was observed on irradiated oxides and this was very similar to electrical stress-induced leakage currents. Unlike conventional electrical stress-induced leakage currents, however, electron-beam induced leakage currents exhibit a power law relationship with fluency without any signs of saturation. It has also been found that the electron-beam neither accelerates nor initiates quasibreakdown of the ultrathin gate oxide. Therefore, the traps generated by electron-beam irradiation do not contribute to quasibreakdown, only to the leakage current. © 2000 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/62130
ISSN: 00218979
Appears in Collections:Staff Publications

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