Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/62116
Title: Electroluminescence properties of bipolar resonant tunneling diode
Authors: Sheng, Hanyu 
Chua, Soo-Jin 
Issue Date: 1994
Source: Sheng, Hanyu,Chua, Soo-Jin (1994). Electroluminescence properties of bipolar resonant tunneling diode. Proceedings of SPIE - The International Society for Optical Engineering 2321 : 101-103. ScholarBank@NUS Repository.
Abstract: An electroluminescence model of bipolar resonant tunneling diode is carried out. The current is the sum of electron and hole current. The electron and hole density at resonant level of quantum well are related with the electron and hole current respectively. Radiative recombination rate formula is derived from matrix element, electrons and holes distribution. Result shows the large on-off ratio of light output can be achieved by the bipolar resonant tunneling diode.
Source Title: Proceedings of SPIE - The International Society for Optical Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/62116
ISBN: 0819416525
ISSN: 0277786X
Appears in Collections:Staff Publications

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