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|Title:||Electroluminescence properties of bipolar resonant tunneling diode||Authors:||Sheng, Hanyu
|Issue Date:||1994||Citation:||Sheng, Hanyu,Chua, Soo-Jin (1994). Electroluminescence properties of bipolar resonant tunneling diode. Proceedings of SPIE - The International Society for Optical Engineering 2321 : 101-103. ScholarBank@NUS Repository.||Abstract:||An electroluminescence model of bipolar resonant tunneling diode is carried out. The current is the sum of electron and hole current. The electron and hole density at resonant level of quantum well are related with the electron and hole current respectively. Radiative recombination rate formula is derived from matrix element, electrons and holes distribution. Result shows the large on-off ratio of light output can be achieved by the bipolar resonant tunneling diode.||Source Title:||Proceedings of SPIE - The International Society for Optical Engineering||URI:||http://scholarbank.nus.edu.sg/handle/10635/62116||ISBN:||0819416525||ISSN:||0277786X|
|Appears in Collections:||Staff Publications|
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