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|Title:||Electroluminescence model of bipolar resonant tunnelling diode|
|Authors:||Sheng, H. |
|Citation:||Sheng, H., Chua, S.-J. (1994-04). Electroluminescence model of bipolar resonant tunnelling diode. Optical and Quantum Electronics 26 (4) : 397-404. ScholarBank@NUS Repository. https://doi.org/10.1007/BF00304244|
|Abstract:||An electroluminescence model of a bipolar resonant tunnelling diode is carried out. The current is the sum of the electron and hole current. The electron and hole density at the resonant level of a quantum well are related to the electron and hole current, respectively. A radiative recombination rate formula is derived from the matrix element, electron and hole distribution. The results show that a large on-off ratio of light output can be achieved by the bipolar resonant tunnelling diode. © 1994 Chapman & Hall.|
|Source Title:||Optical and Quantum Electronics|
|Appears in Collections:||Staff Publications|
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