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https://doi.org/10.1007/BF00304244
| Title: | Electroluminescence model of bipolar resonant tunnelling diode | Authors: | Sheng, H. Chua, S.-J. |
Issue Date: | Apr-1994 | Citation: | Sheng, H., Chua, S.-J. (1994-04). Electroluminescence model of bipolar resonant tunnelling diode. Optical and Quantum Electronics 26 (4) : 397-404. ScholarBank@NUS Repository. https://doi.org/10.1007/BF00304244 | Abstract: | An electroluminescence model of a bipolar resonant tunnelling diode is carried out. The current is the sum of the electron and hole current. The electron and hole density at the resonant level of a quantum well are related to the electron and hole current, respectively. A radiative recombination rate formula is derived from the matrix element, electron and hole distribution. The results show that a large on-off ratio of light output can be achieved by the bipolar resonant tunnelling diode. © 1994 Chapman & Hall. | Source Title: | Optical and Quantum Electronics | URI: | http://scholarbank.nus.edu.sg/handle/10635/62115 | ISSN: | 03068919 | DOI: | 10.1007/BF00304244 |
| Appears in Collections: | Staff Publications |
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