Please use this identifier to cite or link to this item:
|Title:||Electroluminescence model of bipolar resonant tunnelling diode|
|Authors:||Sheng, H. |
|Source:||Sheng, H., Chua, S.-J. (1994-04). Electroluminescence model of bipolar resonant tunnelling diode. Optical and Quantum Electronics 26 (4) : 397-404. ScholarBank@NUS Repository. https://doi.org/10.1007/BF00304244|
|Abstract:||An electroluminescence model of a bipolar resonant tunnelling diode is carried out. The current is the sum of the electron and hole current. The electron and hole density at the resonant level of a quantum well are related to the electron and hole current, respectively. A radiative recombination rate formula is derived from the matrix element, electron and hole distribution. The results show that a large on-off ratio of light output can be achieved by the bipolar resonant tunnelling diode. © 1994 Chapman & Hall.|
|Source Title:||Optical and Quantum Electronics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 14, 2017
WEB OF SCIENCETM
checked on Nov 16, 2017
checked on Dec 17, 2017
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.