Please use this identifier to cite or link to this item: https://doi.org/10.1007/BF00304244
Title: Electroluminescence model of bipolar resonant tunnelling diode
Authors: Sheng, H. 
Chua, S.-J. 
Issue Date: Apr-1994
Source: Sheng, H., Chua, S.-J. (1994-04). Electroluminescence model of bipolar resonant tunnelling diode. Optical and Quantum Electronics 26 (4) : 397-404. ScholarBank@NUS Repository. https://doi.org/10.1007/BF00304244
Abstract: An electroluminescence model of a bipolar resonant tunnelling diode is carried out. The current is the sum of the electron and hole current. The electron and hole density at the resonant level of a quantum well are related to the electron and hole current, respectively. A radiative recombination rate formula is derived from the matrix element, electron and hole distribution. The results show that a large on-off ratio of light output can be achieved by the bipolar resonant tunnelling diode. © 1994 Chapman & Hall.
Source Title: Optical and Quantum Electronics
URI: http://scholarbank.nus.edu.sg/handle/10635/62115
ISSN: 03068919
DOI: 10.1007/BF00304244
Appears in Collections:Staff Publications

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