Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/62114
Title: Electrical characterisation of metal-thin oxide-silicon tunnel diodes prepared by rapid thermal annealing
Authors: Choi, W.K. 
Poon, F.W.
Issue Date: Sep-1997
Source: Choi, W.K.,Poon, F.W. (1997-09). Electrical characterisation of metal-thin oxide-silicon tunnel diodes prepared by rapid thermal annealing. Physica Status Solidi (A) Applied Research 163 (1) : 129-140. ScholarBank@NUS Repository.
Abstract: We present electrical results of metal-thin oxide-silicon tunnel diodes fabricated on rapid thermal anneal (RTA) silicon wafers with native oxide layers. The annealing temperature is crucial in deciding whether a Schottky or a tunnel diode is obtained as a result of RTA. In the reverse bias direction the degree of inversion at the silicon surface was found to depend on the illumination intensity and this has a direct effect on the magnitude of the tunnel current. Devices with gold and aluminium top contacts resulted in minority and majority carrier tunnel diodes, respectively. The capacitance versus voltage measurements confirmed the results obtained from the current versus voltage and X-ray photoelectron experiments. The interface trap and the fixed charge densities of our devices reduced as the annealing temperature or annealing time increased.
Source Title: Physica Status Solidi (A) Applied Research
URI: http://scholarbank.nus.edu.sg/handle/10635/62114
ISSN: 00318965
Appears in Collections:Staff Publications

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