Please use this identifier to cite or link to this item:
|Title:||EFFECT OF OXYGEN INCORPORATION OF BHF ETCH RATE OF PLASMA-ENHANCED CVD SILICON NITRIDE FILMS PREPARED IN THE TEMPERATURE RANGE 50-300 degree C.|
|Authors:||Ling, C.H. |
|Source:||Ling, C.H.,Kwok, C.Y.,Prasad, K. (1985-09). EFFECT OF OXYGEN INCORPORATION OF BHF ETCH RATE OF PLASMA-ENHANCED CVD SILICON NITRIDE FILMS PREPARED IN THE TEMPERATURE RANGE 50-300 degree C.. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes 24 (9) : 1238-1239. ScholarBank@NUS Repository.|
|Abstract:||It is shown that oxygen introduction into the reactants during deposition of Si-N films leads to a reduction in the hydrogen content of these films and a reduced etch rate at all deposition temperatures in the range 50-300 degree C. The effect of the hydrogen depletion is more significant at lower temperatures, and this accounts for the etch rate peak at 150 degree C. While the etch rate correlates well with the hydrogen content in the film, the possibility of its dependence on the film structure, as suggested by the density minimum and the sharp change in refractive index at 150 degree C, can not be excluded. 9 refs.|
|Source Title:||Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 15, 2017
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.