Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0038-1098(00)00134-4
Title: Correlation between the infrared reflectance and microstructure of thin gallium nitride films grown on silicon substrates
Authors: Hou, Y.T. 
Feng, Z.C.
Chen, J.
Zhang, X.
Chua, S.J. 
Lin, J.Y. 
Issue Date: 30-May-2000
Source: Hou, Y.T., Feng, Z.C., Chen, J., Zhang, X., Chua, S.J., Lin, J.Y. (2000-05-30). Correlation between the infrared reflectance and microstructure of thin gallium nitride films grown on silicon substrates. Solid State Communications 115 (1) : 45-49. ScholarBank@NUS Repository. https://doi.org/10.1016/S0038-1098(00)00134-4
Abstract: Thin gallium nitride (GaN) films grown on silicon substrates are studied by infrared reflectance (IR) spectroscopy and scanning electron microscopy (SEM). For different samples, a variation of the reststrahlen band is observed. Through a theoretical analysis using a proposed three-component effective medium model, this variation of IR spectra is attributed to the polycrystalline nature of GaN grown on silicon, as revealed by SEM measurements. A correlation between the shape of the reststrahlen band and the microstructure of the GaN film is found. It shows that IR can offer a versatile means to characterize the quality of GaN on silicon.
Source Title: Solid State Communications
URI: http://scholarbank.nus.edu.sg/handle/10635/61979
ISSN: 00381098
DOI: 10.1016/S0038-1098(00)00134-4
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