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https://scholarbank.nus.edu.sg/handle/10635/61966
| Title: | Contact resistivity dependence on Ge:Ni ratio in AuNiAuGe metallization on n-GaAs | Authors: | Chua, Soo-Jin Lee, Seng Hin |
Issue Date: | Jan-1994 | Citation: | Chua, Soo-Jin,Lee, Seng Hin (1994-01). Contact resistivity dependence on Ge:Ni ratio in AuNiAuGe metallization on n-GaAs. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 33 (1 A) : 66-69. ScholarBank@NUS Repository. | Abstract: | It is found that the Ni:Ge ratio in AuGeNiAu metallization on n-GaAs determines the optimally low contact resistance condition independent of the Au layer thickness. Secondary-ion mass spectroscopy showed that, at this Ni:Ge ration of 1, maximum Ge doping on the n-GaAs was obtained. | Source Title: | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | URI: | http://scholarbank.nus.edu.sg/handle/10635/61966 | ISSN: | 00214922 |
| Appears in Collections: | Staff Publications |
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