Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/61966
Title: Contact resistivity dependence on Ge:Ni ratio in AuNiAuGe metallization on n-GaAs
Authors: Chua, Soo-Jin 
Lee, Seng Hin
Issue Date: Jan-1994
Source: Chua, Soo-Jin,Lee, Seng Hin (1994-01). Contact resistivity dependence on Ge:Ni ratio in AuNiAuGe metallization on n-GaAs. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 33 (1 A) : 66-69. ScholarBank@NUS Repository.
Abstract: It is found that the Ni:Ge ratio in AuGeNiAu metallization on n-GaAs determines the optimally low contact resistance condition independent of the Au layer thickness. Secondary-ion mass spectroscopy showed that, at this Ni:Ge ration of 1, maximum Ge doping on the n-GaAs was obtained.
Source Title: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
URI: http://scholarbank.nus.edu.sg/handle/10635/61966
ISSN: 00214922
Appears in Collections:Staff Publications

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