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|Title:||Contact resistivity dependence on Ge:Ni ratio in AuNiAuGe metallization on n-GaAs|
|Authors:||Chua, Soo-Jin |
Lee, Seng Hin
|Source:||Chua, Soo-Jin,Lee, Seng Hin (1994-01). Contact resistivity dependence on Ge:Ni ratio in AuNiAuGe metallization on n-GaAs. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 33 (1 A) : 66-69. ScholarBank@NUS Repository.|
|Abstract:||It is found that the Ni:Ge ratio in AuGeNiAu metallization on n-GaAs determines the optimally low contact resistance condition independent of the Au layer thickness. Secondary-ion mass spectroscopy showed that, at this Ni:Ge ration of 1, maximum Ge doping on the n-GaAs was obtained.|
|Source Title:||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Appears in Collections:||Staff Publications|
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