Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/61934
Title: Charge trapping in interpoly ONO film
Authors: Lira, K.S.
Ling, C.H. 
Issue Date: 1998
Source: Lira, K.S.,Ling, C.H. (1998). Charge trapping in interpoly ONO film. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE : 42-46. ScholarBank@NUS Repository.
Abstract: The charge trapping characteristics of oxide-nitride-oxide (ONO) film in an interpoly capacitor structure has been investigated. The hole trapping characteristics are observed under constant current stress. The centroid of trapped charge is found to be localized at top oxide/nitride interface under both stress polarities. The larger hole trapping observed under negative stress correlates to a shorter electrical lifetime.
Source Title: IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
URI: http://scholarbank.nus.edu.sg/handle/10635/61934
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