Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/61928
Title: Characterization of charge trapping in submicrometer NMOSFET's by gate capacitance measurements
Authors: Ling, C.H. 
Yeow, Y.T.
Ah, L.K.
Issue Date: Nov-1992
Source: Ling, C.H.,Yeow, Y.T.,Ah, L.K. (1992-11). Characterization of charge trapping in submicrometer NMOSFET's by gate capacitance measurements. Electron device letters 13 (11) : 587-589. ScholarBank@NUS Repository.
Abstract: Trapping of net positive charge at low gate stress voltage, and of net negative charge at high gate stress voltage, is observed through changes in the gate-to-drain capacitance of the stressed junction. These observations can be explained in terms of electron trapping, hole trapping, and generation of acceptor-like interface states located in the upper half of the bandgap. Channel shortening is also observed and found to exhibit a logarithmic time dependence.
Source Title: Electron device letters
URI: http://scholarbank.nus.edu.sg/handle/10635/61928
ISSN: 01938576
Appears in Collections:Staff Publications

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