Please use this identifier to cite or link to this item:
|Title:||Characterization of charge trapping in submicrometer NMOSFET's by gate capacitance measurements|
|Authors:||Ling, C.H. |
|Citation:||Ling, C.H.,Yeow, Y.T.,Ah, L.K. (1992-11). Characterization of charge trapping in submicrometer NMOSFET's by gate capacitance measurements. Electron device letters 13 (11) : 587-589. ScholarBank@NUS Repository.|
|Abstract:||Trapping of net positive charge at low gate stress voltage, and of net negative charge at high gate stress voltage, is observed through changes in the gate-to-drain capacitance of the stressed junction. These observations can be explained in terms of electron trapping, hole trapping, and generation of acceptor-like interface states located in the upper half of the bandgap. Channel shortening is also observed and found to exhibit a logarithmic time dependence.|
|Source Title:||Electron device letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jan 12, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.