Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0080-8784(08)60234-3
Title: Chapter 5.2 High-Pressure Study of DX Centers Using Capacitance Techniques
Authors: Li, M.-f. 
Yu, P.Y.
Issue Date: 1998
Citation: Li, M.-f., Yu, P.Y. (1998). Chapter 5.2 High-Pressure Study of DX Centers Using Capacitance Techniques. Semiconductors and Semimetals 54 (C) : 457-484. ScholarBank@NUS Repository. https://doi.org/10.1016/S0080-8784(08)60234-3
Source Title: Semiconductors and Semimetals
URI: http://scholarbank.nus.edu.sg/handle/10635/61925
ISSN: 00808784
DOI: 10.1016/S0080-8784(08)60234-3
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

2
checked on Jul 21, 2018

WEB OF SCIENCETM
Citations

3
checked on Jun 6, 2018

Page view(s)

36
checked on Jul 6, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.