Please use this identifier to cite or link to this item:
https://doi.org/10.1016/S0080-8784(08)60234-3
| Title: | Chapter 5.2 High-Pressure Study of DX Centers Using Capacitance Techniques | Authors: | Li, M.-f. Yu, P.Y. |
Issue Date: | 1998 | Citation: | Li, M.-f., Yu, P.Y. (1998). Chapter 5.2 High-Pressure Study of DX Centers Using Capacitance Techniques. Semiconductors and Semimetals 54 (C) : 457-484. ScholarBank@NUS Repository. https://doi.org/10.1016/S0080-8784(08)60234-3 | Source Title: | Semiconductors and Semimetals | URI: | http://scholarbank.nus.edu.sg/handle/10635/61925 | ISSN: | 00808784 | DOI: | 10.1016/S0080-8784(08)60234-3 |
| Appears in Collections: | Staff Publications |
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