Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0080-8784(08)60234-3
Title: Chapter 5.2 High-Pressure Study of DX Centers Using Capacitance Techniques
Authors: Li, M.-f. 
Yu, P.Y.
Issue Date: 1998
Source: Li, M.-f., Yu, P.Y. (1998). Chapter 5.2 High-Pressure Study of DX Centers Using Capacitance Techniques. Semiconductors and Semimetals 54 (C) : 457-484. ScholarBank@NUS Repository. https://doi.org/10.1016/S0080-8784(08)60234-3
Source Title: Semiconductors and Semimetals
URI: http://scholarbank.nus.edu.sg/handle/10635/61925
ISSN: 00808784
DOI: 10.1016/S0080-8784(08)60234-3
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