Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/61916
Title: Capacitance-voltage measurements on MOS capacitors fabricated on polycrystalline silicon wafers
Authors: Ling, C.H. 
Tay, T.M.
Issue Date: 1992
Source: Ling, C.H.,Tay, T.M. (1992). Capacitance-voltage measurements on MOS capacitors fabricated on polycrystalline silicon wafers. Applied Surface Science 59 (2) : 105-110. ScholarBank@NUS Repository.
Abstract: Metal-oxide-semiconductor (MOS) capacitors Fabricated on mold cast polycrystalline silicon wafers exhibit a large stretch-out and distortion both in the capacitance-voltage as well as in the inversion capacitance-frequency characteristics. This is attributed to the high density of interface traps, which can respond to gate signals over a wide range of frequencies. The frequency behaviour of the inversion capacitance over the temperature range 30-200°C demonstrates the generation-recombination, and diffusion mechanisms of the minority carrier response to an AC gate signal. The dominance of one mechanism over the other can be characterised by a transition frequency. Arrhenius plots of the transition frequency reveal three activation energies: 1.09, 0.59 and 0.16 eV. The first two energies are attributed to the generation-recombination and diffusion mechanisms, whereas the third energy remains unidentified. A high transition temperature of 170°C is observed, which is in agreement with the high density of bulk generation-recombination centres present in the polycrystalline material. © 1992.
Source Title: Applied Surface Science
URI: http://scholarbank.nus.edu.sg/handle/10635/61916
ISSN: 01694332
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

19
checked on Dec 8, 2017

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.