Please use this identifier to cite or link to this item: https://doi.org/10.1007/s00170-009-2347-6
Title: Study of the upper bound of tool edge radius in nanoscale ductile mode cutting of silicon wafer
Authors: Li, X. 
Cai, M.
Rahman, M. 
Liang, S.
Keywords: Crack initiation
Molecular dynamics
Nanoscale cutting
Silicon wafer
Upper bound
Issue Date: Jun-2010
Source: Li, X., Cai, M., Rahman, M., Liang, S. (2010-06). Study of the upper bound of tool edge radius in nanoscale ductile mode cutting of silicon wafer. International Journal of Advanced Manufacturing Technology 48 (9-12) : 993-999. ScholarBank@NUS Repository. https://doi.org/10.1007/s00170-009-2347-6
Abstract: In cutting of brittle materials, experimentally it was observed that there is an upper bound of tool cutting edge radius, beyond which, although the undeformed chip thickness is smaller than the tool cutting edge radius, the ductile mode cutting cannot be achieved. However, why there is an upper bound of tool cutting edge radius in nanoscale ductile mode cutting of brittle materials has not been fully understood. In this study, based on the tensile stress distribution and the characteristics of the distribution obtained from molecular dynamics simulation of nanoscale ductile cutting of silicon, an approximation for the tensile stress distribution was obtained. Using this tensile stress distribution with the principles of geometrical similarity and fracture mechanics, the critical conditions for the crack initiation have been determined. The result showed that there is a critical tool cutting edge radius, beyond which crack initiation can occur in the nanoscale cutting of silicon, and the chip formation mode is transferred from ductile to brittle. That is, this critical tool cutting edge radius is the upper bound of the tool cutting edge radius for ductile mode cutting of silicon. © 2009 Springer-Verlag London Limited.
Source Title: International Journal of Advanced Manufacturing Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/61408
ISSN: 02683768
DOI: 10.1007/s00170-009-2347-6
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