Please use this identifier to cite or link to this item:
|Title:||Circular apertures for contact hole patterning in 193 nm immersion lithography|
|Authors:||Tay, C.J. |
|Citation:||Tay, C.J., Quan, C., Ling, M.L., Chua, G.S., Tan, S.K., Lin, Q. (2011-03). Circular apertures for contact hole patterning in 193 nm immersion lithography. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 29 (2) : -. ScholarBank@NUS Repository. https://doi.org/10.1116/1.3546100|
|Abstract:||Contact hole patterning has always been one of the most challenging issues in lithography. Conventional optical proximity correction (OPC) approach for contact hole patterning involves dimensional biasing, addition of serifs at corners, and insertion of subresolution enhancement features. However, as dimensions reduce, process window enhancement resulted from conventional OPC approach encounters limitations. In this paper, a new approach for contact hole patterning is investigated. Instead of using a square shape as target of a printed feature, a circular shape is proposed. Using the proposed method improvement in aerial image quality is achieved and the average improvement in the depth of focus is around 11%. In addition, the average normalized image logarithmic slope improvement for different pitches is found to be around 15%. © 2011 American Vacuum Society.|
|Source Title:||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 14, 2018
WEB OF SCIENCETM
checked on Jun 18, 2018
checked on May 18, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.