Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.3546100
Title: Circular apertures for contact hole patterning in 193 nm immersion lithography
Authors: Tay, C.J. 
Quan, C. 
Ling, M.L.
Chua, G.S.
Tan, S.K.
Lin, Q.
Issue Date: Mar-2011
Source: Tay, C.J., Quan, C., Ling, M.L., Chua, G.S., Tan, S.K., Lin, Q. (2011-03). Circular apertures for contact hole patterning in 193 nm immersion lithography. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 29 (2) : -. ScholarBank@NUS Repository. https://doi.org/10.1116/1.3546100
Abstract: Contact hole patterning has always been one of the most challenging issues in lithography. Conventional optical proximity correction (OPC) approach for contact hole patterning involves dimensional biasing, addition of serifs at corners, and insertion of subresolution enhancement features. However, as dimensions reduce, process window enhancement resulted from conventional OPC approach encounters limitations. In this paper, a new approach for contact hole patterning is investigated. Instead of using a square shape as target of a printed feature, a circular shape is proposed. Using the proposed method improvement in aerial image quality is achieved and the average improvement in the depth of focus is around 11%. In addition, the average normalized image logarithmic slope improvement for different pitches is found to be around 15%. © 2011 American Vacuum Society.
Source Title: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
URI: http://scholarbank.nus.edu.sg/handle/10635/59709
ISSN: 10711023
DOI: 10.1116/1.3546100
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