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|Title:||Characterization of localized laser assisted eutectic bonds|
Single crystal quartz-to-silicon
|Source:||Tan, A.W.Y., Tay, F.E.H., Zhang, J. (2006-01-10). Characterization of localized laser assisted eutectic bonds. Sensors and Actuators, A: Physical 125 (2) : 573-585. ScholarBank@NUS Repository. https://doi.org/10.1016/j.sna.2005.07.006|
|Abstract:||An innovative bonding process for silicon and single crystal quartz has been developed and investigated using various material science characterization methods, such as TOF-SIMS, SEM, EDX and XRD. The bonding process combines the principles of laser transmission welding, eutectic bonding and bonding by localized heating. A focused laser beam (low power, max. 0.83 W) is transmitted through a quartz medium to intermediate layers of chromium, gold and tin at the silicon-quartz interface to provide localized heating and bonding. This bonding process is particularly suitable for bonding wafers containing temperature sensitive devices as it confines the temperature increase to a small area. Bond strength of over 15 MPa is comparable to most localized bonding schemes. This process provides a simple yet robust bonding solution with rapid processing time, selectivity of bonded area and corrosion resistant joints. © 2005 Elsevier B.V. All rights reserved.|
|Source Title:||Sensors and Actuators, A: Physical|
|Appears in Collections:||Staff Publications|
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