Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.sna.2005.07.006
Title: Characterization of localized laser assisted eutectic bonds
Authors: Tan, A.W.Y.
Tay, F.E.H. 
Zhang, J.
Keywords: Eutectic
Gold-tin
Interfacial characterization
Laser bonding
Low temperature
Single crystal quartz-to-silicon
Issue Date: 10-Jan-2006
Source: Tan, A.W.Y., Tay, F.E.H., Zhang, J. (2006-01-10). Characterization of localized laser assisted eutectic bonds. Sensors and Actuators, A: Physical 125 (2) : 573-585. ScholarBank@NUS Repository. https://doi.org/10.1016/j.sna.2005.07.006
Abstract: An innovative bonding process for silicon and single crystal quartz has been developed and investigated using various material science characterization methods, such as TOF-SIMS, SEM, EDX and XRD. The bonding process combines the principles of laser transmission welding, eutectic bonding and bonding by localized heating. A focused laser beam (low power, max. 0.83 W) is transmitted through a quartz medium to intermediate layers of chromium, gold and tin at the silicon-quartz interface to provide localized heating and bonding. This bonding process is particularly suitable for bonding wafers containing temperature sensitive devices as it confines the temperature increase to a small area. Bond strength of over 15 MPa is comparable to most localized bonding schemes. This process provides a simple yet robust bonding solution with rapid processing time, selectivity of bonded area and corrosion resistant joints. © 2005 Elsevier B.V. All rights reserved.
Source Title: Sensors and Actuators, A: Physical
URI: http://scholarbank.nus.edu.sg/handle/10635/59697
ISSN: 09244247
DOI: 10.1016/j.sna.2005.07.006
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