Please use this identifier to cite or link to this item:
|Title:||Adsorption characteristics of parent and copper-sputtered RD silica gels|
|Citation:||Saha, B.B., Chakraborty, A., Koyama, S., Lee, J.-B., He, J., Ng, K.C. (2007-03). Adsorption characteristics of parent and copper-sputtered RD silica gels. Philosophical Magazine 87 (7) : 1113-1121. ScholarBank@NUS Repository. https://doi.org/10.1080/14786430601032386|
|Abstract:||Surface modification of type RD silica gel was achieved by depositing layers of thin-film copper on the parent silica gel surfaces so as to improve their performances, circumventing the poor thermal conductivity of the adsorbent. Porous properties (surface area, pore size and volume) were determined using nitrogen adsorption/desorption isotherm measurements, which were performed on adsorbents for both parent and Cu-sputtered silica gels in liquid nitrogen at a temperature of 77.4K. The copper sputtering experiments were conducted in a chamber of inert argon gas where the chamber was bombarded with a radio frequency (RF) of 13.56MHz. The comparative performance of the parent and Cu-sputtered silica gels was determined via various key measurements such the Brunauer-Emmett-Teller (BET), the Horvath and Kawazoe (HK) and the hot-disc sensor methods.|
|Source Title:||Philosophical Magazine|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Oct 17, 2018
WEB OF SCIENCETM
checked on Oct 9, 2018
checked on Sep 7, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.