Please use this identifier to cite or link to this item:
|Title:||Tunneling time of spin particle determined by the spin precession method in the Dresselhaus spin orbit semiconductor system|
|Source:||Wan, F., Jalil, M.B.A., Tan, S.G. (2009). Tunneling time of spin particle determined by the spin precession method in the Dresselhaus spin orbit semiconductor system. Journal of Applied Physics 105 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3065968|
|Abstract:||We determine the traversal time τ of electrons through a semiconducting barrier by relating it to the precession of its spin due to Dresselhaus spin orbital effect. The precessional angle is obtained by performing a unitary transformation of the spin axis to the effective spin orbit coupling field and determining the change in phase of the transmitted wave function. The calculated τ exhibits counterintuitive trends with respect to barrier geometry and electron energy. The proposed clocking method based on the Dresselhaus effect might have practical advantages over the applied field and simplify experimental efforts to investigate electron tunneling in semiconductor materials. © 2009 American Institute of Physics.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 21, 2018
WEB OF SCIENCETM
checked on Jan 15, 2018
checked on Feb 18, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.