Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2045555
Title: Tungsten nanocrystals embedded in high- k materials for memory application
Authors: Samanta, S.K. 
Yoo, W.J. 
Samudra, G. 
Tok, E.S. 
Bera, L.K.
Balasubramanian, N.
Issue Date: 12-Sep-2005
Source: Samanta, S.K., Yoo, W.J., Samudra, G., Tok, E.S., Bera, L.K., Balasubramanian, N. (2005-09-12). Tungsten nanocrystals embedded in high- k materials for memory application. Applied Physics Letters 87 (11) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2045555
Abstract: The formation of tungsten nanocrystals (W-NCs) on atomic-layer-deposited HfAlO Al2 O3 tunnel oxide was demonstrated for application in a memory device. It was found that the density and size distribution of W-NCs are not only controlled by the initial film thickness, annealing temperature, and time, but also by the metaltunnel oxide interface structure. Well-isolated W-NCs with an average diameter of 5 nm and a surface density of 5× 1011 cm-2 were obtained by applying a thin Al2 O3 wetting layer onto HfAlO tunneling oxide. A large flatband voltage shift of 5.7 V was observed from capacitance-voltage measurement when a bias voltage up to ±4 V was applied. © 2005 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/57719
ISSN: 00036951
DOI: 10.1063/1.2045555
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