Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2178404
Title: Transparent indium zinc oxide ohmic contact to phosphor-doped n -type zinc oxide
Authors: Hu, G. 
Kumar, B. 
Gong, H. 
Chor, E.F. 
Wu, P.
Issue Date: 2006
Source: Hu, G., Kumar, B., Gong, H., Chor, E.F., Wu, P. (2006). Transparent indium zinc oxide ohmic contact to phosphor-doped n -type zinc oxide. Applied Physics Letters 88 (10) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2178404
Abstract: Transparent indium zinc oxide (IZO) ohmic contacts to phosphor-doped n -type ZnO have been formed. The resistance, transmittance, and phase reliability of the contacts were investigated. As deposited, an ohmic contact was formed with a specific contact resistance of about 1.1 × 10-4 Ω cm2 and the transmittance of the ZnOIZO (520350 nm) film was more than 75% in the 450-1100 nm wavelength range. After annealing at 400 °C for 5 min in a vacuum (2× 10-5 mbar), the specific contact resistance was reduced by about two orders of magnitude to 3.8× 10-6 Ω cm2, while maintaining the contact stability and high optical transparency. © 2006 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/57709
ISSN: 00036951
DOI: 10.1063/1.2178404
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

49
checked on Dec 5, 2017

WEB OF SCIENCETM
Citations

45
checked on Nov 16, 2017

Page view(s)

16
checked on Dec 10, 2017

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.