Transparent indium zinc oxide ohmic contact to phosphor-doped n -type zinc oxide

Abstract

Transparent indium zinc oxide (IZO) ohmic contacts to phosphor-doped n -type ZnO have been formed. The resistance, transmittance, and phase reliability of the contacts were investigated. As deposited, an ohmic contact was formed with a specific contact resistance of about 1.1 × 10-4 Ω cm2 and the transmittance of the ZnOIZO (520350 nm) film was more than 75% in the 450-1100 nm wavelength range. After annealing at 400 °C for 5 min in a vacuum (2× 10-5 mbar), the specific contact resistance was reduced by about two orders of magnitude to 3.8× 10-6 Ω cm2, while maintaining the contact stability and high optical transparency. © 2006 American Institute of Physics.