Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.3494150
Title: Thermal stability improvement of the lanthanum aluminate/silicon interface using a thin yttrium interlayer
Authors: Liu, Z.Q.
Chiam, S.Y.
Chim, W.K. 
Pan, J.S.
Ng, C.M.
Issue Date: 2010
Citation: Liu, Z.Q., Chiam, S.Y., Chim, W.K., Pan, J.S., Ng, C.M. (2010). Thermal stability improvement of the lanthanum aluminate/silicon interface using a thin yttrium interlayer. Journal of the Electrochemical Society 157 (12) : G250-G257. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3494150
Abstract: We investigate the effects of an ultrathin yttrium interlayer at the interface of lanthanum aluminate and silicon with thermal annealing. Addition of the yttrium interlayer resulted in a smaller increase in the valence band offset, a reduction in the interface trap density, and a close to four-order reduction in leakage current after 800°C thermal annealing. The valence band offsets are measured with X-ray photoelectron spectroscopy and compared with those obtained from electrical measurements. The good correlation of the two measurements indicates a change in the valence band offset caused by interface dipoles. The performance improvements are attributed to a reduction in lanthanum interdiffusion and the formation of an yttrium-rich silicate interfacial layer, which minimize leakage current flow and reduce hydrogen desorption in interface trap formation. © 2010 The Electrochemical Society.
Source Title: Journal of the Electrochemical Society
URI: http://scholarbank.nus.edu.sg/handle/10635/57652
ISSN: 00134651
DOI: 10.1149/1.3494150
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