Please use this identifier to cite or link to this item:
|Title:||Thermal stability improvement of the lanthanum aluminate/silicon interface using a thin yttrium interlayer|
|Citation:||Liu, Z.Q., Chiam, S.Y., Chim, W.K., Pan, J.S., Ng, C.M. (2010). Thermal stability improvement of the lanthanum aluminate/silicon interface using a thin yttrium interlayer. Journal of the Electrochemical Society 157 (12) : G250-G257. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3494150|
|Abstract:||We investigate the effects of an ultrathin yttrium interlayer at the interface of lanthanum aluminate and silicon with thermal annealing. Addition of the yttrium interlayer resulted in a smaller increase in the valence band offset, a reduction in the interface trap density, and a close to four-order reduction in leakage current after 800°C thermal annealing. The valence band offsets are measured with X-ray photoelectron spectroscopy and compared with those obtained from electrical measurements. The good correlation of the two measurements indicates a change in the valence band offset caused by interface dipoles. The performance improvements are attributed to a reduction in lanthanum interdiffusion and the formation of an yttrium-rich silicate interfacial layer, which minimize leakage current flow and reduce hydrogen desorption in interface trap formation. © 2010 The Electrochemical Society.|
|Source Title:||Journal of the Electrochemical Society|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Aug 16, 2018
WEB OF SCIENCETM
checked on Aug 1, 2018
checked on Feb 25, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.