Please use this identifier to cite or link to this item:
|Title:||Theoretical model of interface trap density using the spread of the differential capacitance characteristics in scanning capacitance microscopy measurements|
|Authors:||Wong, K.M. |
|Citation:||Wong, K.M., Chim, W.K. (2006). Theoretical model of interface trap density using the spread of the differential capacitance characteristics in scanning capacitance microscopy measurements. Applied Physics Letters 88 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2177352|
|Abstract:||In this letter, we propose a theoretical model for the calculation of interface trap density (Dit) in a metal-oxide-semiconductor structure using data from scanning capacitance microscopy (SCM) measurements. The model is based on the correlation of Dit with the change in the full width at half maximum of the SCM differential capacitance (dCdV) characteristics. The good agreement between the calculated Dit values from the SCM theoretical model and the experimental midgap Dit values obtained from conductance measurements shows the validity of the proposed model. The model opens up possibilities for obtaining the spatial distribution (with nanometers resolution) of interfacial traps on a device using SCM measurements. © 2006 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 11, 2018
WEB OF SCIENCETM
checked on Jul 3, 2018
checked on Jun 22, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.