Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3690139
Title: The role of Mg interface layer in MgO magnetic tunnel junctions with CoFe and CoFeB electrodes
Authors: Yang, H. 
Yang, S.-H.
Parkin, S.
Issue Date: 2012
Source: Yang, H.,Yang, S.-H.,Parkin, S. (2012). The role of Mg interface layer in MgO magnetic tunnel junctions with CoFe and CoFeB electrodes. AIP Advances 2 (1) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3690139
Abstract: The tunneling spin polarization (TSP) is directly measured from reactively sputter deposited crystalline MgO tunnel barriers with various CoFe(B) compositions using superconducting tunneling spectroscopy.We find that theMg interface layer thickness dependence of TSP values for CoFeB/Mg/MgO junctions is substantially different from those for CoFe/Mg/MgO especially in the pre-annealed samples due to the formation of boron oxide at the CoFeB/MgO interface. Annealing depletes boron at the interface thus requiring a finite Mg interface layer to prevent CoFeOx formation at the CoFeB/MgO interface so that the TSP values can be optimized by controlling Mg thickness. © 2012 Author(s).
Source Title: AIP Advances
URI: http://scholarbank.nus.edu.sg/handle/10635/57636
ISSN: 21583226
DOI: 10.1063/1.3690139
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