Please use this identifier to cite or link to this item: https://doi.org/10.1049/el.2010.1064
Title: Temperature independent current biasing employing TFET
Authors: Guo, P.F.
Yang, Y.
Samudra, G. 
Heng, C.H. 
Yeo, Y.C. 
Issue Date: 27-May-2010
Source: Guo, P.F., Yang, Y., Samudra, G., Heng, C.H., Yeo, Y.C. (2010-05-27). Temperature independent current biasing employing TFET. Electronics Letters 46 (11) : 786-787. ScholarBank@NUS Repository. https://doi.org/10.1049/el.2010.1064
Abstract: A recent study to a tunnelling field-effect transistor (TFET) reveals interesting temperature behaviour. It is found that the TFET drain current temperature coefficient varies with the applied drain and gate voltage. Explored is a circuit which exploits this unique behaviour of the TFET to achieve temperature independent current biasing. © 2010 The Institution of Engineering and Technology.
Source Title: Electronics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/57604
ISSN: 00135194
DOI: 10.1049/el.2010.1064
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