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|Title:||Temperature independent current biasing employing TFET|
|Citation:||Guo, P.F., Yang, Y., Samudra, G., Heng, C.H., Yeo, Y.C. (2010-05-27). Temperature independent current biasing employing TFET. Electronics Letters 46 (11) : 786-787. ScholarBank@NUS Repository. https://doi.org/10.1049/el.2010.1064|
|Abstract:||A recent study to a tunnelling field-effect transistor (TFET) reveals interesting temperature behaviour. It is found that the TFET drain current temperature coefficient varies with the applied drain and gate voltage. Explored is a circuit which exploits this unique behaviour of the TFET to achieve temperature independent current biasing. © 2010 The Institution of Engineering and Technology.|
|Source Title:||Electronics Letters|
|Appears in Collections:||Staff Publications|
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