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https://doi.org/10.1049/el.2010.1064
| Title: | Temperature independent current biasing employing TFET | Authors: | Guo, P.F. Yang, Y. Samudra, G. Heng, C.H. Yeo, Y.C. |
Issue Date: | 27-May-2010 | Citation: | Guo, P.F., Yang, Y., Samudra, G., Heng, C.H., Yeo, Y.C. (2010-05-27). Temperature independent current biasing employing TFET. Electronics Letters 46 (11) : 786-787. ScholarBank@NUS Repository. https://doi.org/10.1049/el.2010.1064 | Abstract: | A recent study to a tunnelling field-effect transistor (TFET) reveals interesting temperature behaviour. It is found that the TFET drain current temperature coefficient varies with the applied drain and gate voltage. Explored is a circuit which exploits this unique behaviour of the TFET to achieve temperature independent current biasing. © 2010 The Institution of Engineering and Technology. | Source Title: | Electronics Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/57604 | ISSN: | 00135194 | DOI: | 10.1049/el.2010.1064 |
| Appears in Collections: | Staff Publications |
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