Tantalum-nitride antifuse electromechanical OTP for embedded memory applications

Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2013.2262918

Title:	Tantalum-nitride antifuse electromechanical OTP for embedded memory applications
Authors:	Singh, P. Li, C.G. Pitchappa, P. Lee, C.
Keywords:	Embedded memory nanoelectro-mechanical systems (NEMS) nonvolatile memory (NVM) one-time programmable (OTP) tantalum nitride (TaN)
Issue Date:	2013
Citation:	Singh, P., Li, C.G., Pitchappa, P., Lee, C. (2013). Tantalum-nitride antifuse electromechanical OTP for embedded memory applications. IEEE Electron Device Letters 34 (8) : 987-989. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2013.2262918
Abstract:	Embedded nonvolatile memory (NVM) integrated in the back-end of line processes are of high interest, particularly for rugged environments (high temperature/radiation or vibration). This letter demonstrates the use of tantalum nitride microbeams as antifuse one-time programmable (OTP) NVM. It needs a single mask process and can be integrated above an integrated circuit. Typical fusing current is 1 mA, operating voltage is 4 V, and the measured contact resistance is <2kΩ. A hybrid one-transistor/one microbeam/bit memory array is proposed for back-end compatible and low-cost OTP NVM integration. © 1980-2012 IEEE.
Source Title:	IEEE Electron Device Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/57592
ISSN:	07413106
DOI:	10.1109/LED.2013.2262918
Appears in Collections:	Staff Publications

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